IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 Package

  • Product Code: EPI10891
  • Availability: 1459
  • Rs.99.00
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IRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


Features:-

• High efficiency synchronous rectification in SMPS

• Uninterruptible power supply

• High speed power switching

• Hard switched and high frequency circuits


Detailed Specifications

 

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 180A
Drain-Source Resistance (Rds On) 4.5Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 210 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 370W


Related Documents

 IRFB4110 MOSFET Datasheet 


Brand/Manufacturer Generic
Country Of Origin China
Packer / Importer Address Circuit Pulse Private Limited, Sector-47, Gurugram, Haryana - 122018, India
MRP Rs. 116.82 (Inclusive of all Taxes)
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