IRF610 MOSFET - 200V 3.3A N-Channel Power MOSFET TO-220 Package
- Product Code: EPI10869
- Availability: 921
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Rs.31.00
- (Excluding 18% GST)
OR
IRF610 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 3.3A |
| Drain-Source Resistance (Rds On) | 1.5Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 8.2 nC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 36W |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Circuit Pulse Private Limited, Sector-47, Gurugram, Haryana - 122018, India |
| MRP | Rs. 36.58 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.