IRF510 MOSFET - 100V 5.6A N-Channel Power MOSFET TO-220 Package
- Product Code: EPI10862
- Availability: 729
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Rs.48.00
- (Excluding 18% GST)
OR
IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 5.6A |
| Drain-Source Resistance (Rds On) | 540mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 8.3 nC |
| Operating Temperature Range | -55 - 175°C |
| Power Dissipation (Pd) | 43W |
Related Documents:-
| Brand/Manufacturer | Generic |
| Country Of Origin | China |
| Packer / Importer Address | Circuit Pulse Private Limited, Sector-47, Gurugram, Haryana - 122018, India |
| MRP | Rs. 59 (Inclusive of all Taxes) |
* Product Images are shown for illustrative purposes only and may differ from actual product.